Signal Dependence on Irradiation Geometry of Cd1-xZnxTe Detectors for Digital X-Ray Imaging
G. C. GIAKOS, S. VEDANTHAM, B. PILLAI, S. CHOWDHURY, D. B. SHEFFER, A. DASGUPTA, R. J. ENDORF, A. PASSALAQUA, AND S. KOLLIPARA
ABSTRACT
CdZnTe is one of the most promising semiconductor material in the field of digital X-ray imaging, and may be operated at room temperature. To improve the detector characteristics, ternary systems such as Cd1-xZnxTe were grown by the high pressure Bridgman (HPG) technique. The signal performance characteristics of quasi-resistive Cd1-xZnxTe semiconductor detectors, was studied at different directions of irradiation, within the X-ray diagnostic energy range. The experimental results suggest that the total efficiency of these semiconductor detectors depends upon the energy absorption efficiency as well as the charge collection efficiency. This imaging detector allows one to investigate methods to improve the detection and imaging performance parameters as part of the development of an X-ray imaging system.
Publication Source: Journal of X-Ray Science and Technology, ISSN: 0895-3996. Volume 8, Number 2, 1998. Pages: 295... Publisher:IOS Press - Amsterdam
