| ABSTRACT: | LASER PHOTO-CARRIER RADIOMETRY: TECHNIQUE AND APPLICATIONS TO
SEMICONDUCTOR FABRICATION PROCESS NDE
A. Mandelis, J. Batista, and D. Shaughnessy
Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering,
University of Toronto, Toronto, CANADA
Laser Photo-Carrier Radiometry (PCR) is a non-contacting NDE technique for inspection of the electronic
quality of semiconductor materials and structures, recently introduced at the University of Toronto. It is
currently being developed as a full micro- and nano-fabrication process NDE metrology. The method
involves optical excitation of electron-hole pairs with super-bandgap laser radiation, and monitoring of near
infrared (NIR) photons emitted during the radiative recombination of photo-excited free carriers from
bandedge to impurity states or band-to-band recombination. In Si this process is a low-yield room-
temperature photoluminescence. This talk will present the fundamentals of PCR and will discuss first
applications with industrial silicon wafers in the areas of ion implantation non-destructive monitoring, non-
contact measurement of carrier mobilities in Si substrates and sub-surface depth profilometric damage
imaging using infrared photon diffusion waves. Current investigations involving the measurement of wafer
resistivity and heavy ion (Fe+) contamination studies will also be presented.
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