NON-DESTRUCTIVE CHARACTERIZATION OF BURIED SOLID-STATE INTERFACES AND SEMICONDUCTING DEVICES BY MEANS OF X-RAY EMISSION SPECTROSCOPY
E. Z. Kurmaev and V. E. Scherbinin Institute of Metal Physics, Russian Academy of Sciences - Ural Division 620219 Yekaterinburg GSP-170, Russia
ABSTRACT
Ultra-soft X-ray emission spectroscopy with high-energy (0.2 - 0.3 eV) and high spatial ( 1-5 mkm) resolution is used for characterization of buried solid-solid interfaces and semiconducting devices on the basis of silicon. We have shown that by using this method one can construct the depth profile of different phases distribution in the following interfaces: transition metal / silicon system, W/Si multilayers and Co / SiO2 / Si system as function of thermal treatment, Si3N4 / GaAs system irradiated by excimer laser, Fe-implanted silicon wafers in dependence of fluence and heat treatment, SiOx / p-Si MOS Structures irradiated by high energy electrons.
Publication Source: Trends in NDE Science & Technology; Proceedings of the 14th World Conference on Non-Destructive Testing, New Delhi, 8-13 December 1996.Vol. 1, pages 37 - 40 Publisher:Ashgate Publishing Company
NDTnet
