![]() ·Table of Contents ·Materials Characterization and testing | GMR-Sensor in Use of Stress MeasurementDr.-Ing. Werner Ricken, Prof. Dr.rer.nat. Wolf-Jürgen Becker, Dr.-Ing. Jigou LiuContact |
A new approach of a contactless magnetoelastic torque measurement was initialized by the development of a micro system consisting of a hall sensor, planar exciting coils and a softmagnetic yoke on a silicon chip [3, 4]. This micro system was developed in a CMOS technology and based on magnetic field effect transistor MAGFET. The advantages of this micro system is the integration of sensor, field excitation and signal processing on the same chip. Consequently the engineers use semiconductor as sensor material. In this case, the sensitivity and the magnetic field resolution are limited by the CMOS technology. The prototype of a MAGFET attains a sensitivity of s=5 V/T which strongly varies with the sensor geometry. The detectable magnetic field are limited by the flicker noise of the sensor. A smallest amount of
is achieved.
The higher sensistivity and the smaller detectable field caused us to investigate GMR-Sensors in use of the magnetoelastic force measurement. In our contribution we will show the sensor characteristic ie the linearity, teh hysteresis and temperature error. Then we will present the results of a stress measurement at the center wire of the prestressed steel braid. Finaly, the measurements with a parallel and orthogonal field alignment follows.
| (1) |
Fig 1: Electronicsscattering at Co/Cu-layers[7] |
There are three important technological types [8] of a GMR-Sensor. First, the GMR happens in a multilayer structure with alternate magnetic and non-magnetic layers. The thickness of the conductor layer which is precisely controlled to the proper thickness range is the reason of an antiferromagnetic coupling of the adjacent magnetic layers with antiparallel alignment of the magnetization (high resistance state). A large field is necessary to overcome this coupling and make a parallel alignment (low resistance state). This sensor shows the most amount of a GMR up to 70%. The antiparallel alignment in a Co/Fe sandwich layer is obtained by the magnetic anisotropic of the ferrmomagnetic layers. The parallel alignment of the magnetization of the two magnetic layers is attained by a saturated field Hs. Fig. 1 shows the state of the parallel and antiparallel alignment. The third important GMR-Sensor is the spin valve sensor. It has the highest sensitivity of s = 40(mV/V)/mT and significantly are qualified for technical applications.One of the two magnetic layer of a spin valve sensor is pinned by an antiferromagnetic layer like the FeMn-exchange layer. As figure 2 shows, it is no movement of the magnetization in the pinned layer by an external field. But in contrast to this layer, the external field changes the direction of the magnetization in the free layer.
Fig 2: Spin value layer
|
Fig 3: Characteristic curves at T=0 and 450C |
Before a sensor is used in non destructive testing, it must be investigated under the same environments with defined specimen and wellknown circumstance. Because of this, we investigate the magnetic resolution, linearity, hystersis and the temperature error of a GMR-Sensor [10].Afterwards, the characteristic data of the commercial available GMR-Multilayer sensor AA002 [9] follows. Fig. 4 shows the charactersitic signal curve. This sensor is suitable for the use in the linear range up to 1.1 mT. We calculate the sensitivity of s = 3.75(mV/V)/mT at a temperature T=20° from the fitted signal curve. The deviation of 2.1% from the mean value of sensitivity depends on the temperature and the mean variation of the item, which is given by the procduction.
Fig 4: Non-linearity
|
Fig 5: Hysteresis |
are sufficient for an application as a magnetoelastic stress sensor. The figures 4 and 5 show the calculation of non-linearity and hysteresis. Other important properties of a sensor are the temperature and long run stability. We measured the signal of the GMR-stripes, which are typically wired as a measurement bridge on a chip with a 8-pin SOIC package as housing. The figure 6 shows the curves of the calculated temperature error at three different magnetic flux densities B. The definition of the calculated temperature error fT is given by
| (2) |
Fig 6: Temperature error
|
Fig 7: Long-run stability[10] |
. With a standard derivation of 50mV a magnetic resolution of DB=267 × 10-6Tis achieved. This value of the GMR-Sensor makes the use in non-destructive testing clear.
| (3) |
Fig 8: Measurement equipment
|
Fig 9: Stray Field Measurement with U-Yoke(15´11´6.4mm) |
to the reactance XL0 without damping the eddy current sensor at a frequency f= 1kHz . The measurement values Ud of the GMR-Sensor are scaled to the supply voltage U0=5V of the measurement bridge. Both curves show a hysteresis loop which results from the higher coercitive field strength Hc of the steel. It is considered that a lower Hc decrease the hystersis. A coating with an amorphous foil should improve the measurement results.
Fig 10: Reactance of an Eddy Current Sensor
|
Fig 11: Signal of a GMR-Sensor |
results from a parallel field alignment and a small excitation coil with the E-core ferrite. It can be improved by coating the wire with a softmagnetic material like amorphous metal. The hysteresis error attained a value up to 10 % for the whole loading cycle. The temperature error which essentially comes from the sensor shows figure 5. These first investigations show that the sensitivity of a GMR-Sensor is sufficient for a magnetoelastic stress measurement.
Fig 12: GMR-Measurement,parallel Direction
|
Fig 13: GMR-Measurement,orthogonal Direction |
Fig 14: Temparature Stability |
| © AIPnD , created by NDT.net | |Home| |Top| |