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Practical Application of X-Ray Diffraction Imaging

Kirsten G. Lipetzky and Robert E. Green, Jr.
The Johns Hopkins University,
Center for Nondestructive Evaluation
3400 N. Charles Street, 102 Maryland Hall
Baltimore, Maryland 21218 USA
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INTRODUCTION

EXPERIMENTAL PROCEDURE

EXPERIMENTAL RESULTS

CONCLUSIONS

REFERENCES

  1. Kirsten G. Lipetzky and Robert E. Green, Jr., "Characterization of Single Crystal Mechanical Test Specimens for Advanced Turbine Applications," Nondestructive Characterization of Materials, IX, 661 (1999).
  2. Kirsten G. Lipetzky, Robert E. Green, Jr. and Paul J. Zombo, "Reliability Enhancement of Single Crystal Blades Used in Power Generation Gas Turbines," Failure Analysis: A Foundation for Diagnositcs and Prognostics Development, Virginia Beach, Virginia, pp. 61-70 (April 19-22, 1999).
  3. Robert E. Green, Jr., John M. Winter, Jr. and Kirsten G. Lipetzky, "Materials Characterization by X-ray Topographic and Tomographic Imaging," Nondestructive Evaluation (NDE) and Material Properties, IV, 21(1999).
  4. K. G. Lipetzky, R. E. Green, Jr., R. W. Armstrong and W. T. Beard, Jr., "The Evaluation of Quartz Resonators via X-ray Diffraction Topography," Review of Progress in Quantitative Nondestructive Evaluation, 18, 2079,1999.
  5. W.T. Beard, K.G. Lipetzky and R.W. Armstrong, 'Dynamical Effects in High Resolution Topographic Imaging of Electronic Devices, Advances in X-ray Analysis, 41, 203 (1999).
  6. Kirsten G. Lipetzky, Robert E. Green, Jr., and Paul J. Zombo, "Development of X-ray Diffraction Methods to Examine Single Crystal Turbine Blades,"Nondestructive Characterization of Materials, VIII, 423 (1998).
  7. R.W. Armstrong, W.T. Beard, K.A. Green and X.J. Zhang, "High-Resolution Imaging of Electronic Devices Using Line Modified-Asymmetric Crystal Topography (LM -ACT)," Il Nuovo Cimento 19 D (2-4), 147 (1997).
  8. W.T. Beard, Jr., K.A. Green, X.J. Zhang and R.W. Armstrong, "High Resolution Imaging of Electronic Devices via X-ray Diffraction Topography," Applied Physics Letters, 69(4), 488 (1996).
  9. K.A. Green, W.T. Beard, X.J. Zhang, and R.W. Armstrong, "Application of Line Modified-Asymmetric Crystal Topography for Qualitative and Quantitative Evaluation of Integrated Circuits," Advances in X-ray Analysis, 38,227 (1995).
  10. W.T. Beard, Jr., K.A. Green, X.J. Zhang and R.W. Armstrong, "In-Depth Resolution of Integrated Circuits via X-ray Based Line Modified Asymmetric Crystal Topography," 1994 IEEE International Reliability Physics Proceedings, IEEE Catalog No. 94CH3332-4, 425.
  11. Kirsten A. Green and Robert E. Green, Jr., "Application of X-ray Topography for Nondestructive Inspection of Industrial Materials," Review of Progress in Quantitative Nondestructive Evaluation, 13, 571 (1994).
  12. W.J. Boettinger, H.E. Burdette, M. Kuriyama and R.E. Green, Jr., "Asymmetric Crystal Topographic Camera,"Rev. Sci. Instrum.,47, 906 (1976).
  13. C. Hallin, I.G. Ivanov, T. Egilsson, A. Henry, O. Kordina and E. JanzJn, "The Material Quality of CVD-Grown SiC Using Different Carbon Precursors," J. Crystal Growth, 183, 163 (1998).
  14. I.H. Khan, "The Growth and Structure of Single-Crystal Films," in Handbook of Thin Film Technology, Leon I.Maissel and Reinhard Glang, Editors, New York: McGraw-Hill Book Company, 1970.

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